A Flexibility and Accuracy Comparison Study of Different Current-Voltage Equations for Double-Gate Nano-MOSFET by Simulation and Theory

Ooi Chek Yee, Wong Pei Voon


Non-equilibrium Green’s function (NEGF) is a popular method for simulation and modelling of non-equilibrium electron quantum ballistic transport in open mesoscopic system, which is double-gate (DG) nano-MOSFET in this paper, with self-energy scattering effects. In this paper, on-line device simulator nanoMOS using NEGF with finite difference method (FDM) discretization is used to obtain current-voltage (I-V) graph. The simulated on-state current is compared with the calculated and plotted using freeware Scilab code without including NEGF with FDM method to demonstrate the flexibility and accuracy of NEGF with FDM method. Accuracy of 92% is achieved. The difference in due to output resistance at saturation region of I-V curve. Also, this quantum transport model is compared with two others electron transport models derived through Boltzmann statistics along with Einstein relationship, one with high drain bias while other with traditional MOSFET model with ballistic mobility. After analysis, these two approximated equations show 0.87 and 8.8 times, respectively, matches against simulated value. Obviously, nano-MOSFET under high drain bias is closely matched with the quantum model. The traditional MOSFET with ballistic mobility is suitable for very-short-channel length devices (like DG nano-MOSFET) and III-V channel materials with very high-real mobility devices.


Conventional model; Current-voltage; Nano-MOSFET; NEGF; Quantum transport.

Article Metrics

Abstract view : 91 times
PDF - 37 times

Full Text:



Z. Ren, Nanoscale MOSFETs: Physics, simulation and design, Ph.D. Dissertation, Purdue University, 2001.

M. Baldo, Introduction to Nanoelectronics, MIT Open Course Ware Publication, 2011.

A. E. Atamuratov, A. Yusupov, Z. A. Atamuratova, J. C. Chedjou and K. Kyamakya, Lateral capacitance-voltage method of nanoMOSFET for detecting the hot carrier injection, Applied Sciences, 10, 2020, 7935.

I. Pappas, G. Ghibaudo, C.A. Dimitriadis and C. Fenouillet-Beranger, Backscattering coefficient and drift-diffusion mobility extraction in short channel MOS devices, Solid-State Electronics, 53, 2009, 54-56.

Ooi Chek Yee and Lim Soo King, Study of timing characteristics of not gate transistor level circuit implemented using nano-MOSFET by analyzing sub-band potential energy profile and current-voltage characteristic of quasi-ballistic transport, World Journal of Nano Science and Engineering, 2016, 177-188.

Ooi Chek Yee, Device-circuit level simulation study of three inputs complex logic gate designed using nano-MOSFETs, Applications of Modelling and Simulation, 3, 2019, 1-10.

Ooi Chek Yee and Lim Soo King, Nano-MOSFETs implementation of different logic families of two inputs NAND gate transistor level circuits: A simulation study, Jurnal Teknologi, 79, 2017, 41-49.

Ooi Chek Yee, Mok Kai Ming and Wong Pei Voon, Device and circuit level simulation study of NOR gate logic families designed using nano-MOSFETs, Platform: A Journal of Science and Technology, 4(1), 2021, 73-84.

Ooi Chek Yee, Device and Transistor Level Circuit Performance Analysis of Nanoscale MOSFET, Ph.D. Thesis, Universiti Tunku Abdul Rahman, 2019.

Ooi Chek Yee and Lim Soo King, Simulation Study on different logic families of NOT gate transistor level circuits implemented using nano-MOSFETs, Journal of Telecommunication, Electronic and Computer Engineering, 8, 2016, 61-67.

Ooi Chek Yee and Lim Soo King, A comparative study of quantum gates and classical logic gates implemented using solid-state double-gate nano-MOSFETs, International Journal of Nanoelectronics and Materials, 9, 2016, 123-132.

A. V. Pawar, S. S. Kanapally, A. P. Chougule, P. P. Waifalkar, K. V. More, R. K. Kamat and T. D. Dongale, Simulation study of field-effect transistor based cylindrical silicon nanowire biosensor: Effect of length and radius of the nanowire, 11(1), 2019, 01005.

V. P. Georgiev, M. M. Mirza, A. -I. Dochioiu, F. Adamu-Lema, S. M. Amoroso, E. Towie, C. Riddet, D. A. MacLaren, A. Asenov and D. J. Paul, Experimental and simulation study of silicon nanowire transistors using heavily doped channels, IEEE Transactions on Nanotechnology, 16(5), 2017, 727-735.

R. Chakraborty and J. K. Mandal, Design of 4 nm MOSFET and its applications, Microsystem Technologies, 2018, 1-8.

X. Wang, NanoMOS 4.0: A Tool to Explore Ultimate Si Transistors and Beyond, Master of Science Thesis, Purdue University, 2010.

U. Wulf, M. Krahlisch and H. Richter, Scaling properties of ballistic nano-transistors, Nanoscale Research Letters, 6, 2011, 1-8.

P. A. G. Sankar and K. Udhayakumar, MOSFET-like CNFET based logic gate library for low-power application: A comparative study, Journal of Semiconductors, 35(7), 2014, 075001.

H. Jiang, S. Shao, W. Cai and P. Zhang, Boundary treatments in non-equilibrium Green’s function (NEGF) methods for quantum transport in nano-MOSFETs, Journal of Computational Physics, 227, 2008, 6553-6573.

M. Lundstrom, Notes on the Ballistic MOSFET, Network for Computational Nanotechnology, Purdue University, 2005.

C. Jeong, D. A. Antoniadis and M. S. Lundstrom, On backscattering and mobility in nanoscale silicon MOSFETs, IEEE Transactions on Electronic Devices, 56(11), 2009, 2762-2769.

A. Ziabari, M. Charmi and H. R. Mashayekhi, The impact of body doping concentration on the performance of nano DG-MOSFETs: A quantum simulation, Chinese Journal of Physics, 51(4), 2013, 844-853.

M. L. P. Tan, G. Lentaris and G. AJ Amaratunga, Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET, Nanoscale Research Letters, 7, 2012, 1-10.

H. C. Chin, C. S. Lim, W. S. Wong, K. A. Danapalasingam, V. K. Arora and M. L. P. Tan, Enhanced device and circuit-level performance benchmarking of graphene nanoribbon field-effect transistor against a nano-MOSFET with interconnects, Journal of Nanomaterials, 2014, 1-14.

A. Islam and K. Kalna, Analysis of electron transport in the nano-scaled Si, SOI and III-V MOSFETs: Si/SiO2 interface charges and quantum mechanical effects, The 2nd International Workshop on Materials Science and Mechanical Engineering, Bristol, UK, 504, 2019, 012021.

A. Rahman, Exploring New Channel Materials for Nanoscale CMOS Devices: A Simulation Approach, Ph.D. Dissertation, Purdue University, 2005.


  • There are currently no refbacks.